s m d ty p e w w w . ke x in . com . c n 1 m osfe t n- ch an n el m osf et irf 7476 ( k r f7 4 7 6 ) f e a tu r e s v d s ( v ) = 1 2 v i d = 1 5 a ( v g s = 1 0 v ) r d s ( o n ) 8 m ( v g s = 4 . 5 v ) r d s ( o n ) 3 0 m ( v g s = 2 . 8 v ) sop -8 0.21 +0.04 -0.02 1.50 0.15 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain a b s o l u te m a x i m u m ra ti n g s t a = 2 5 s y m b o l r a t i n g u n i t v d s 1 2 v g s 1 2 t a = 2 5 1 5 t a = 7 0 1 2 i d m 1 2 0 a v a l a n c h e c u r r e n t i a r 1 2 t a = 2 5 2 . 5 t a = 7 0 1 . 6 0 . 0 2 w / s i n g l e p u l s e a v a l a n c h e e n e r g y e a s 1 6 0 m j r t h ja 5 0 r t h jc 2 0 t j 1 5 0 t st g - 5 5 t o 1 5 0 j u n c t i o n t e m p e r a t u r e s t o r a g e t e m p e r a t u r e r a n g e p d w p o w e r d i s s i p a t i o n / w t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - a m b i e n t t h e r m a l r e s i s t a n c e . j u n c t i o n - t o - c a s e l i n e a r d e r a t i n g f a c t o r v p u l s e d d r a i n c u r r e n t p a r a m e t e r c o n t i n u o u s d r a i n c u r r e n t i d d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e a 8 1 2 3 4 5 6 7 d d d d g s s s
s m d ty p e w w w . k e x i n . c o m . c n 2 m os f e t n- ch an n el m osf et irf 7476 ( k r f7 4 7 6 ) t y p i c a l ch a r a c te r i s i ti c s m a r k i n g 7 4 7 6 k c * * * * m a r k i n g p a r a m e t e r s y m b o l t e s t c o n d i t i o n s m i n t y p m a x u n i t d r a i n - s o u r c e b r e a k d o w n v o l t a g e v d s s i d = 2 5 0 a , v g s = 0 v 1 2 v v d s = 9 . 6 v , v g s = 0 v 1 0 0 v d s = 9 . 6 v , v g s = 0 v , t j = 1 2 5 2 5 0 g a t e - b o d y l e a k a g e c u r r e n t i g s s v d s = 0 v , v g s = 1 2 v 2 0 0 n a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) v d s = v g s , i d = 2 5 0 a 0 . 6 1 . 9 v v g s = 4 . 5 v , i d = 1 5 a 8 v g s = 2 . 8 v , i d = 1 2 a 3 0 f o r w a r d t r a n s c o n d u c t a n c e g f s v d s = 6 v , i d = 1 2 a 3 1 s i n p u t c a p a c i t a n c e c i ss 2 5 5 0 o u t p u t c a p a c i t a n c e c o ss 2 1 9 0 r e v e r s e t r a n s f e r c a p a c i t a n c e c r ss 4 5 0 t o t a l g a t e c h a r g e q g 2 6 4 0 g a t e s o u r c e c h a r g e q g s 4 . 6 g a t e d r a i n c h a r g e q g d 1 1 o u t p u t g a t e c h a r g e q o ss v g s = 0 v , v d s = 5 v 1 7 t u r n - o n d e l a y t i m e t d ( o n ) 1 1 t u r n - o n r i s e t i m e t r 2 9 t u r n - o f f d e l a y t i m e t d ( o f f ) 1 9 t u r n - o f f f a l l t i m e t f 8 . 3 b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r 5 5 8 2 b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r 5 9 8 9 n c b o d y d i o d e r e v e r s e r e c o v e r y t i m e t r r 5 4 8 1 n s b o d y d i o d e r e v e r s e r e c o v e r y c h a r g e q r r 6 0 9 0 n c m a x i m u m b o d y - d i o d e c o n t i n u o u s c u r r e n t i s 2 . 5 p u l s e d s o u r c e c u r r e n t i s m 1 2 0 i s = 1 2 a , v g s = 0 v , t j = 2 5 0 . 8 7 1 . 2 i s = 1 2 a , v g s = 0 v , t j = 1 2 5 0 . 7 3 v g s = 0 v , v d s = 6 v , f = 1 m h z v g s = 4 . 5 v , v d s = 1 0 v , i d = 1 2 a p f i f = 1 2 a , v r = 1 2 v , d i / d t = 1 0 0 a / u s , t j = 1 2 5 n s v g s = 4 . 5 v , v d s = 6 v , i d = 1 2 a , r g = 1 . 8 n c i f = 1 2 a , v r = 1 2 v , d i / d t = 1 0 0 a / u s , t j = 2 5 z e r o g a t e v o l t a g e d r a i n c u r r e n t i d s s u a m r d s ( o n ) s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e a d i o d e f o r w a r d v o l t a g e v s d v
s m d ty p e w w w . k e x i n . c o m . c n 3 m osf e t n- ch an n el m osf et irf 7476 ( k r f7 4 7 6 ) t y p i c a l ch a r a c te r i s i ti c s fig 2 . typical output characteristics fig 1 . typical output characteristics fig 3 . typical transfer characteristics fig 4. normalized on-resistance vs. temperature 1. 5 2. 0 2. 5 3. 0 3. 5 4. 0 v g s , gate-to-source voltage (v ) 0.1 0 1.0 0 10.0 0 100.0 0 1000 . 0 0 i d t n e r r u c e c r u o s - o t - n i a r d , ( ) t j = 25 c t j = 150 c v ds = 10 v 20 s pulse widt h - 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 10 0 12 0 14 0 16 0 0. 0 0. 5 1. 0 1. 5 2. 0 r , drain-to-source on resistanc e (normalized ) ds(on ) v = i = g s d 4.5 v 15 a t j , junction temperature (c) 0. 1 1 1 0 10 0 v d s , drain-to-source voltage (v ) 0 . 00 1 0 . 0 1 0. 1 1 1 0 10 0 100 0 i d ) a ( t n e r r u c e c r u o s - o t - n i a r d , 1.5 v 20 s pulse widt h tj = 25 c v g s top 10v 8.0 v 5.0 v 4 . 5 v 3 . 5 v 2 . 7 v 2 . 0 v b otto m 1 . 5 v 0. 1 1 1 0 10 0 v d s , drain-to-source voltage (v ) 0.0 1 0. 1 1 1 0 10 0 100 0 i d ) a ( t n e r r u c e c r u o s - o t - n i a r d , 1.5 v 20 s pulse widt h tj = 150 c v g s top 10v 8.0 v 5.0 v 4 . 5 v 3 . 5 v 2 . 7 v 2 . 0 v b otto m 1 . 5 v fig 6 . typical gate charge vs. gate-to-source voltage fig 5 . typical capacitance vs. drain-to-source voltage 0 5 1 0 1 5 2 0 2 5 3 0 0 1 2 3 4 5 6 q , total gate cha r g e ( n c ) v , gate-to-source voltage (v ) g g s i = d 12 a v = 2.4 v d s v = 6 v d s v = 9.6 v d s 1 1 0 10 0 v d s , drain-to-source voltage (v ) 10 0 100 0 1000 0 10000 0 ) f p ( e c n a t i c a p a c , c v gs = 0v, f = 1 mh z c is s = c g s + c g d , c d s sho rt ed c rs s = c g d c os s = c d s + c g d c os s c rs s c is s
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t . n- ch an n el m osf et irf 7476 ( k r f7 4 7 6 ) t y p i c a l ch a r a c te r i s i ti c s fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area 0. 1 1 1 0 10 0 100 0 0. 2 0. 4 0. 6 0. 8 1. 0 1. 2 1. 4 i , reverse drain current (a ) s d v = 0 v g s t = 150 c j t = 25 c j v s d , source-to-drain voltage (v) 0 1 1 0 10 0 v d s , drain-to-source voltage (v ) 0. 1 1 1 0 10 0 100 0 i d ) a ( t n e r r u c e c r u o s - o t - n i a r d , tc = 25 c tj = 150 c single puls e 1mse c 10mse c operation in this area limited by r d s (on ) 100 se c fig 10. maximum effective transient thermal impedance, junction-to-case 0 . 1 1 1 0 10 0 0.000 1 0 . 00 1 0.0 1 0 . 1 1 1 0 10 0 100 0 notes : 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thj a a p t t dm 1 2 t , rectangular pulse duration (sec ) thermal respons e ( z ) 1 t h j a 0.0 1 0.0 2 0.0 5 0.1 0 0.2 0 d = 0.5 0 single puls e (thermal response ) fig 9 . maximum drain current vs. case temperature fig 10a . switching time test circuit v ds 90% 10% v gs t d(on ) t r t d( of f ) t f fig 10b . switching time waveforms v d s pulse width 1 s duty factor 0. 1 % r d v g s r g d.u.t . 4.5 v + - v d d 2 5 5 0 7 5 10 0 12 5 15 0 0 3 6 9 1 2 1 5 i , drain current (a ) d t c , case temperature ( c )
s m d ty p e w w w . k e x i n . c o m . c n 5 m o s f e t n- ch an n el m osf et irf 7476 ( k r f7 4 7 6 ) t y p i c a l ch a r a c te r i s i ti c s fig 1 3 . on-resistance vs. gate voltage fig 1 2 . on-resistance vs. drain current fig 13a&b. basic gate charge test circuit and waveform f i g 14a& b . unclamped inductive test circuit and waveforms fig 1 4 c . maximum avalanche energy vs. drain current d . u . t . v ds i d i g 3ma v gs . 3 f 50k . 2 f 12v cu r r en t regu l a t o r same t y pe as d. u. t . curr e n t s ampl i n g r e s i s t o r s + - v g s q g q gs q gd v g charge t p v ( b r ) d s s i a s r g i a s 0 . 0 1 t p d . u . t l v d s + - v d d d r i v e r a 1 5 v 2 0 v 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 0 1 0 0 2 0 0 3 0 0 4 0 0 e , s ingl e p u l s e a v ala n c h e e nerg y ( m j ) a s i d t o p bot t o m 5 . 4 a 9 . 6 a 1 2 a 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 i d , dra i n curr e n t ( a ) 6 . 5 6 . 8 7 . 0 7 . 3 7 . 5 r ) n o ( s d m ( e c n a t s i s e r n o e c r u o s - o t - n i a r d , ) v g s = 4 . 5 v 2 . 0 4 . 0 6 . 0 8 . 0 1 0 . 0 v g s , g a t e - t o - s our c e v o l t ag e ( v ) 5 . 0 0 7 . 0 0 9 . 0 0 1 1 . 0 0 1 3 . 0 0 1 5 . 0 0 r ) n o ( s d m ( e c n a t s i s e r n o e c r u o s - o t - n i a r d , ) i d = 1 5 a sta r ti n g t j , junction temperature (c)
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